Aluminium nitride substrates have the following key characteristics:
Thermal Conductivity
Aluminum nitride is one of the materials with the highest thermal conductivity in ceramics, which makes it the perfect choice for applications requiring efficient heat dissipation. It has thermal conductivity comparable to copper, allowing for effective thermal management in electronic equipment.
Electrical Insulation
AlN substrates have exceptional electrical insulating properties, including high dielectric strength and low electrical conductivity. This allows them for uses in high-power electronics and high-frequency devices, where electrical isolation and insulation are crucial.
Chemical Stability
Aluminium nitride has low reactivity with a wide range of chemicals and gases, is chemically stable, and oxidation-resistant. Due to its stability, it can be used in harsh environments and applications involving corrosive substances.
Low Coefficient of Thermal Expansion (CTE)
AlN substrates possess a low coefficient of thermal expansion, exhibiting minimal dimensional changes in response to temperature fluctuations. This feature contributes to the reduction of thermal stress and the risk of cracking in electronic assemblies.
High Frequency and RF Performance
Aluminium nitride is well-suited for high-frequency applications due to its low dielectric loss and high thermal conductivity. AlN substrates are frequently used in RF/microwave components like power amplifiers, filters, and high-speed integrated circuits.
Standard Sizes and Thicknesses of AlN Substrates
The following shows the standard sizes and thicknesses of aluminum nitride substrates available:
Customized Aluminum Nitride Substrates
An aluminum nitride (AlN) substrate can be made specifically according to the given application requirements to customize its size, shape, thickness, and surface characteristics. AlN substrate can be processed using machining techniques such as laser cutting, drilling, and scribing. Based on different applications, surface treatment techniques such as polishing, chemical etching, and plasma cleaning can be used to improve the substrate's surface smoothness, cleanliness, or adhesion.
If needed, the AlN substrate can be metallized or patterned. This involves employing methods like Direct Bonded Copper (DBC), Direct Plated Copper (DPC), Thin Film Metallization and Thick Film Metallization to deposit metal layers (such as gold, silver, or copper) onto particular areas of the substrate.
High Power and High Thermal Conductivity Ceramic Substrate-IGBT Aluminum Nitride Heat Sink
Lead Time of AlN Substrates
For the substrates in stock, they are usually shipped within 7 working days. For the customized order, it will take 2-3 weeks.
Cross-Industries Uses
Applications and industries covered by the versatility of aluminum nitride substrates are numerous:
Optical electronic
AlN substrates are the basis of high-power LEDs and laser diodes because of their effective heat dissipation properties.
Communications
They are the foundation of RF/microwave components that allow dependable signal processing and high-speed data transfer, such power amplifiers and filters.
Implementations of Energy
The foundation of power modules for electric cars, renewable energy systems, and effective power conversion devices is AlN substrates.
Medical Instruments
Their contributions are to medical imaging equipment and ultrasonic transducers, where dependability and accuracy are essential.
Aerospace and Defense
AlN substrates offer electrical insulation and thermal management under demanding conditions to support radar systems, avionics, and satellite communications.
Features of substrates made of aluminum nitride
First-rate thermal management characteristics
With their very high thermal conductivity, our aluminum nitride substrates can rapidly and effectively transfer heat from electronic components to the outside world, lowering operating temperatures and enhancing the dependability and performance of the device.
Great qualities of electrical insulation
High resistivity and low dielectric loss of aluminum nitride substrates guarantee that electromagnetic interference will not impact applications in high-frequency circuits and make them perfect electrical insulators.
Complementing coefficients of thermal expansion
Because of the thermal expansion coefficient of our substrates, which is comparable to that of semiconductor materials like silicon, electronic packaging is less stressed and devices are more stable and reliable over time.
Services for flexible customisation
Since we are aware that every client has individual requirements, we offer specialized services that include substrate size, thickness, shape, and specific function design to suit various application scenarios.
Great performance materials
High-purity raw materials and sophisticated production methods are used to create aluminum nitride substrates that are ideal for high-power and high-temperature settings.
Technology of fine processing
To fulfill the requirements of high-precision applications, we can do high-precision surface treatment with a surface roughness of Ra=0.02μm or less. We are experts in fine processing technologies, including mirror processing.
Vigorous quality control
We use rigorous quality control procedures all through the production process to make sure that every aluminum nitride substrate satisfies the highest requirements and obtains several international certifications.
Capability of quick delivery
Our logistics network and production system are effective enough to meet customer demands fast, reduce delivery times, and guarantee timely advancement of customer projects.
