AlN Substrate

AlN Substrate

AlN substrate possesses a wide range of superior physical properties, including high breakdown electric field strength, thermal conductivity, resistivity, and so forth. In fields like LED packaging, power modules, wafer bonding, power resistors, and metalized substrates (such as thin film, thick film, DPC, DBC, AMB, etc.), it has consistently drawn a lot of interest.

AlN is a covalently bonded crystal with a theoretical density of 3.26g/cm3 and a Mohs hardness of 7-8. It possesses relatively high strength at room temperature, and its strength decreases with increasing temperature more slowly than alumina and silicon nitride. In comparison to other ceramic materials, aluminium nitride exhibits exceptional comprehensive properties, particularly superior thermal conductivity, making it ideal for semiconductor substrates and structural packaging materials, and has tremendous application potential in the electronics industry.

Advantages of AlN Substrate

Superior Thermal Conductivity

Its thermal conductivity is greater than 180 W/m.K, which is 8 times that of alumina, making them dissipate heat produced by electronic components effectively and  appropriate for high-power transistors.

Thermal Expansion Coefficient Similar to Silicon

AlN substrate exhibits thermal expansion coefficient comparable to that of silicon(Si). This contributes to the great dependability of Si chips and thermal cycling.

Electrical Insulation

It has excellent electrical insulation, good volume resistivity, and high breakdown strength, making it well-suited for high-voltage applications.

Low Dielectric Constant

It possesses a low dielectric constant as alumina.

High Temperature Stability

It is perfect for high-temperature applications because it maintains structural integrity at high temperatures.

Non-Toxic

AlN substrate is non-toxic as compared to BeO substrate.

 

General Dimensions of AlN Substrate

The aluminium nitride substrates can be made in the following dimensions:

Aln Substrate

AlN substrates can be produced in a variety of sizes and shapes, including square, rectangular, and circular ones using waterjet and laser cutting. Please be aware that after cutting, the edges will have black marks, which must be removed with a chemical post-treatment. So please don't cut by yourself if there isn't professional equipment available. Unipretec will cut based on your requirements if you let us know the sizes and shapes you desire.

 

AlN substrate can also be pre-die cut (scribe lines) and added fiducial marks to enable easy separation into single pieces after printing. Laser machining can also be used to drill holes. The hole size can be as small as 0.2mm.

 

Surface roughness and flatness are crucial for substrates to be metallized in order to generate conductive channels for electrical signals. AlN substrates can attain a roughness of Ra0.3-0.7um after grinding and lapping. Additionally, they can be polished using either single- or double-sided polishing to achieve a better roughness of Ra0.02-0.05um.

 

Production Methods of Substrates Made of Aluminum Nitride

Several important processes are involved in the manufacture of aluminum nitride substrates:

In Powder Synthesis

Chemical methods are used to synthesise high-purity aluminum nitride powder; these reactions usually include carbothermal reduction of aluminum oxide in a nitrogen environment or direct nitridation of aluminum.

Forming

The AlN powder is combined with binders and then shaped using methods including extrusion, pressing, or tape casting. We call these sculptural creations green bodies.

Wintering

To strengthen and accomplish densification, the green bodies are sintered in a controlled environment at high temperatures. Improving heat conductivity and sintering are common uses for additives like yttria or rare earth oxides.

Equipment and Finishing

As needed for particular applications, AlN substrates are cut to exact dimensions and surface finishes after sintering. For electrical connection, this might involve procedures like polishing, lapping, and metallization.

 

Uses of Aluminum Nitride Substrates

electrical power electronics

Power electronics include transistors, diodes, and power modules extensively use AlN substrates. Their great thermal conductivity enhances dependability and performance by helping to disperse heat produced by powerful components.

Technical LEDs

AlN substrates control the heat produced by the LEDs in LED lighting systems, guaranteeing lifetime and best performance.

Devices for Radio and Microwaves

AlN substrates find use in microwave and radio frequency (RF) devices where signal integrity and performance depend on their superior thermal and electrical characteristics.

Semiconductor Packaging

AlN substrates provide semiconductor devices an electrically insulating and thermally conducting platform in semiconductor packaging. This enhances device performance by lowering heat resistance.

Telecomunications

In high-frequency circuits and devices, AlN substrates are utilized for electrical insulation and thermal control in telecommunications equipment.

Devices for Medicine

The dependability and safety of vital medical equipment are ensured by the thermal management and electrical insulating qualities of AlN substrates used in medical electronics.

Engine Electronics

AlN substrates are used in engine control units and sensors among other automotive electronics to regulate heat and guarantee dependable performance in demanding environments.

Aluminum nitride electronic ceramics have emerged as a solution to highly integrated circuits. It is a crucial component for the heat dissipation of miniaturized electronic devices, which can effectively guarantee their dependability and safety.

AlN Substrate for Package

Aluminum nitride substrates meet the most fundamental requirements for packaging substrates, which include high resistivity, high thermal conductivity, and low dielectric constant, as well as excellent thermal matching with semiconductor materials such as silicon wafers, easy molding, high surface flatness, easy metallization, easy processing, low cost, and other characteristics. In terms of performance, cost, and environmental protection, aluminum nitride substrates outperform many other electronic ceramic materials, and are highly suited for insulating substrates of high-power devices, heat dissipation substrates and packaging substrates of VLSI.

AlN Substrate for Deep UV LED Substrates

The aluminum nitride substrate effectively alleviates stress accumulation during the epitaxial process, reduces epitaxial wafer defects, and significantly improves the performance and longevity of the deep ultraviolet LED device. Aluminum nitride offers good ultraviolet light transmission in addition to its general characteristics of large bandgap width (6.2 eV), high breakdown electric field strength, high thermal conductivity, and great chemical stability, etc. It is the perfect material for making ultraviolet photoelectric products, such as those used in photolithography, water purification, disinfection, communication, sensors, and medical industries, etc.

Substrate for Chip Resistors

The chip can be kept separate from the bottom plate of the module used for heat dissipation by using an AlN ceramic substrate as its carrier. The AlN ceramic layer in the middle of the substrate can effectively enhance the module's insulation capability (ceramic layer insulation can tolerate voltages greater than 2.5KV), and the aluminum nitride ceramic substrate has exceptional thermal conductivity above 180W/m.K. Additionally, the AlN ceramic substrate's expansion coefficient is comparable to that of silicon, meaning stress damage to the chip won't occur. The peeling resistance of AlN substrate is greater than 20N/mm2; it also possesses exceptional mechanical properties, corrosion resistance, and is not easily deformed at high temperatures.

AlN Substrate as High Power Device Material

Aluminium nitride is preferred as an insulating material for power transmission because it has a resistivity above 10^13 Ω cm, a thermal conductivity greater than 180 W/(m.K), and a flexural strength of up to 400 MPa. These properties are in line with the demands of high thermal conductivity, electrical insulation, and mechanical load-bearing of high-power devices.

 

Wide bandgap semiconductor power devices with higher output power are used in the solid-state amplifier circuit of the transceiver component (TR component) of the wireless transceiver system, and aluminium nitride with high thermal conductivity can transmit internal heat to the radiator to prevent excessive internal temperature of components. In order to address issues with heat dissipation and sealing, as well as the vertical interconnection of radio frequency signals in high-density assembly of stacked structures, TR modules fully utilize the high thermal conductivity and high strength characteristics of aluminium nitride substrates, with the adoption of multi-layer HTCC technology.

AlN Substrate as High Frequency Device Material

Aluminium nitride can be utilized in microwave tubes as the collector, clip, and energy transmission window. Aluminium nitride has a dielectric loss as low as 10^(–4), which is capable of preserving the safety of electronic devices when the window heat is too high.

AlN Substrate as Thin Film Material

With good thermal stability and piezoelectricity at high temperatures, aluminium nitride thin film material can function in a high temperature environment up to 1200°C. AlN substrate thin films are suitable for usage in micromodules, sensors, integrated circuits, active components, and MEMS.

Material Data Sheet of Aluminum Nitride

 

Thermal Conductivity of AlN Ceramic Substrate

 

Thermal Coeffecient Expansion of AlN Ceramic Substrates

 

Aluminum nitride (AlN) ceramics feature a number of outstanding properties, including high thermal conductivity, high resistance, low dielectric loss, thermal expansion performance that matches silicon and other semiconductor materials, as well as exceptional mechanical characteristics.

FAQ of AlN Substrates

Q: Do you provide AlN substrate polishing services?

A: Yes, it is feasible for us to polish the substrates for you. Surface roughness Ra0.02-0.05. Both single-sided and double-sided polishing are available.

 

Q: Can I cut AlN substrates myself if I have a laser cutting machine?

A: Unlike alumina substrates, it is not recommended to cut AlN substrates by yourself. The edges of the substrate may burn out black during laser cutting; this requires specialized post-treatment to remove the black edges. We can assist you with the cutting process, and sizes and shapes are customizable.

 

Q: What is the size range of AlN substrate as the heating plate?

A: AlN ceramic heating plates have the ability to provide rapid heating and rapid cooling. Unipretec provides heating plates with thicknesses ranging from 3 to 10mm, and diameters ranging from 100 to 400mm.

 

Q: What's the general size of the circular AlN substrates you produce?

A: Unipretec offers circular substrates in standard sizes of φ100, φ120, φ150, φ203, and φ220. Custom sizes are available.

 

Q: Can you do DPC or DBC on AlN substrates?

A: Yes, Unipretec provides DBC and DPC metalized ceramic substrates. These substrates can be copper-plated not only on single side, but also on double sides and multiple layers.

 

Q: Do you provide samples for test before bulk order?

A: Yes, samples in small quantities are available, and they will be delivered in 7-10 days.

 

Q: Do you produce aluminum nitride plate with thickness above 2.0mm?

A: Yes, we can produce plates with thicknesses ranging from 2.5mm to 10mm using professional processing equipment. The thickness can be flexibly controlled.

Aln Substrate
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